31 Jan 2025Open access7cites
Experimental and theoretical perspective on band gap modulation in Sr2+ modified BaTiO3 capacitorsPublisher siteCeramics International, Ferroelectric and Piezoelectric Materials
Active, last published 2026
In semiconductor materials and devices
O.
Khaldi
Scholar“Research focused on Semiconductor materials and devices and adjacent fields.”
University of Tunis El Manar
Tunisia
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01 · About the work
What I study
. Khaldi is a researcher working on Semiconductor materials and devices. A fuller summary will appear once they update their profile.
02 · Reach
Publication output and reach
O.'s work has been cited 254 times across 3 active years. Bars show publications per year; the line shows cumulative citation totals across publications first appearing in each year.
03 · Research focus
Topics
Semiconductor materials and devices×12Ferroelectric and Negative Capacitance Devices×9ZnO doping and properties×6Ferroelectric and Piezoelectric Materials×5Copper-based nanomaterials and applications×5
04 · Where I am
Affiliations
Affiliation on published researchTunis El Manar University, TunisiaDrawn from the institution listed on this researcher’s published work.
Research themes (UN SDGs)
05 · Selected work
Recent publications
10 works12 Sept 2024
Computational Modeling of Electronic, Valence Band Offset, and Thermoelectric Transport Properties of SrTiO3/LaCrO3 HeterostructuresPublisher siteJournal of Electronic Materials, Electronic and Structural Properties of Oxides
20 Aug 202421cites
Influence of (Co+Al) co−doping on structural, micro-structural, optical and electrical properties of nanostructured zinc oxidePublisher siteCeramics International, ZnO doping and properties
2 Aug 2024
DFT investigation on the design and optimization of icosahedral and octahedral beryllium nitride (Be3N2)x fullerene analogue. A comparative study with isosymmetry carbon fullerenePublisher siteChemical Physics, Fullerene Chemistry and Applications
15 Jun 2024Open access2cites
Relationship Between Electrode Material, Valence Band Offset, and Nonlinearity in the Resistive Switching Behavior of Au/HfO2/M (M = TiN, W, Pt, or AlCu) Metal–Insulator–Metal Devices: Correlation Between Experimental and DFT CalculationsPublisher siteJournal of Electronic Materials, Advanced Memory and Neural Computing
7 Mar 2024
Physical properties and mechanical stability of AlCu:XO2 (X=Hf, Zr) alloys from density functional theory (DFT): Prediction and analysis for photocatalysis and electronic devices applicationsPublisher siteOptik, ZnO doping and properties
4 Jan 2024Open access40cites
Effect of Co Doping on the Physical Properties and Organic Pollutant Photodegradation Efficiency of ZnO Nanoparticles for Environmental ApplicationsPublisher siteNanomaterials, ZnO doping and properties
20 Nov 202312cites
Correlations between structural, dielectric properties, and ab initio calculations in Co-doped ZnO nanoparticles: effect of Co concentrationPublisher siteApplied Physics A, ZnO doping and properties
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