MARATTO

article · Journal of Electronic Materials

Relationship Between Electrode Material, Valence Band Offset, and Nonlinearity in the Resistive Switching Behavior of Au/HfO2/M (M = TiN, W, Pt, or AlCu) Metal–Insulator–Metal Devices: Correlation Between Experimental and DFT Calculations

20242 citationsOpen accessUniversity of Tunis El Manar

In plain language

No abstract is available for this record, so no summary has been generated.

Research topics

  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices

Read the original research

This page summarises published work. The authoritative version sits with the publisher.

View on publisher siteRecord on OpenAlex

DOI: 10.1007/s11664-024-11206-6

Is something wrong with this record? Report it or request removal.

Discussion

Discuss this research

Have you built on this work, tried to replicate it, or seen it applied in practice? Share what you know. Verified researchers and MARATTO™ domain experts can open a discussion, and any member can reply. Contributions are reviewed before they appear.

No discussion yet. Open the first thread.

Sign in to join the discussion

New to MARATTO™? Create a free account.