3 Sept 2026
Effect of thermal load on lasing characteristics of InGaN/GaN single- and Double-QW laser diodePublisher sitePhysica E Low-dimensional Systems and Nanostructures, GaN-based semiconductor devices and materials
Active, last published 2026
In gan-based semiconductor devices and materials
Hassan
Abboudi
Scholar“Research focused on GaN-based semiconductor devices and materials and adjacent fields.”
Claim Your Profile8
H-index
131
Citations
Hassan has not officially claimed their profile. If you are Hassan, claim it free.
Claim Your Profile
Pioneer
LOCKED
Pathfinder
LOCKED
Scholar
EARNED
Innovator
LOCKED
Inventor
LOCKED
Catalyst
LOCKED
Expert
UPGRADE
01 · About the work
What I study
assan Abboudi is a researcher working on GaN-based semiconductor devices and materials. A fuller summary will appear once they update their profile.
02 · Reach
Publication output and reach
Hassan's work has been cited 131 times across 3 active years. Bars show publications per year; the line shows cumulative citation totals across publications first appearing in each year.
03 · Research focus
Topics
GaN-based semiconductor devices and materials×16Semiconductor Quantum Structures and Devices×12Ga2O3 and related materials×6Nanowire Synthesis and Applications×4ZnO doping and properties×2
04 · Where I am
Affiliations
Affiliation on published researchSidi Mohamed Ben Abdellah University, MoroccoDrawn from the institution listed on this researcher’s published work.
Research themes (UN SDGs)
05 · Selected work
Recent publications
6 works25 Sept 2025
Artificial neural network-based forecasting of strained InGaN/GaN quantum well-related optical absorptionPublisher siteSolid State Communications, GaN-based semiconductor devices and materials
20 Nov 2024Open access5cites
Tuning Intermediate Band Solar Cell Efficiency: The Interplay of Electric Fields, Composition, Impurities, and ConfinementPublisher siteNanomaterials, GaN-based semiconductor devices and materials
26 Oct 2024Open access6cites
Enhancing the Photovoltaic Efficiency of In0.2Ga0.8N/GaN Quantum Well Intermediate Band Solar Cells Using Combined Electric and Magnetic FieldsPublisher siteMaterials, Semiconductor Quantum Structures and Devices
19 Feb 20242cites
Electronic Properties of Ultrathin InGaN/GaN Heterostructures under the Influences of Laser and Electric Fields: Investigation of the Harmonic and Inharmonic PotentialsPublisher sitePhysica E Low-dimensional Systems and Nanostructures, GaN-based semiconductor devices and materials
1 Jan 2024Open access11cites
Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and ThicknessPublisher siteNanomaterials, GaN-based semiconductor devices and materials
Expert Academic Profiles go further
Citation trend analytics, exportable publication records, and direct enquiry routing from industry and funders.
Are you Hassan?
Claim it to verify your details, connect with industry partners, and explore Fractional Domain Expert opportunities through MARATTO™.
African researchers are full of potential that too often goes unrecognised. Your MARATTO™ profile gives your work the commercial pathway it deserves.
Claim Your Profile
Free to claim · takes a minute to verify it’s you