3 Sept 2026
Electrical and optical characterisation in AlGaN/GaN/Si HEMTsPublisher siteThe Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, GaN-based semiconductor devices and materials
Active, last published 2026
In gan-based semiconductor devices and materials
Akrem
Essaoudi
Scholar“Research focused on GaN-based semiconductor devices and materials and adjacent fields.”
University of Monastir
Tunisia
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01 · About the work
What I study
krem Essaoudi is a researcher working on GaN-based semiconductor devices and materials. A fuller summary will appear once they update their profile.
02 · Reach
Publication output and reach
Akrem's work has been cited 8 times across 2 active years. Bars show publications per year; the line shows cumulative citation totals across publications first appearing in each year.
03 · Research focus
Topics
GaN-based semiconductor devices and materials×3Silicon Carbide Semiconductor Technologies×2
04 · Where I am
Affiliations
Affiliation on published researchUniversity of Monastir, TunisiaDrawn from the institution listed on this researcher’s published work.
05 · Selected work
Recent publications
2 works1 Dec 20246cites
The Impact of Passivation on the Direct-current and Radio-frequency Performance of GaN/AlGaN HEMT Transistors on Si SubstratesPublisher siteSemiconductors, GaN-based semiconductor devices and materials
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