3 Sept 2026
Effect of thermal load on lasing characteristics of InGaN/GaN single- and Double-QW laser diodePublisher sitePhysica E Low-dimensional Systems and Nanostructures, GaN-based semiconductor devices and materials
Active, last published 2026
In semiconductor quantum structures and devices
A.
Sali
Scholar“Research focused on Semiconductor Quantum Structures and Devices and adjacent fields.”
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01 · About the work
What I study
. Sali is a researcher working on Semiconductor Quantum Structures and Devices. A fuller summary will appear once they update their profile.
02 · Reach
Publication output and reach
A.'s work has been cited 2,358 times across 3 active years. Bars show publications per year; the line shows cumulative citation totals across publications first appearing in each year.
03 · Research focus
Topics
Semiconductor Quantum Structures and Devices×103Quantum Dots Synthesis And Properties×53Quantum and electron transport phenomena×44GaN-based semiconductor devices and materials×28Semiconductor Lasers and Optical Devices×15
04 · Where I am
Affiliations
Affiliation on published researchSidi Mohamed Ben Abdellah University, MoroccoDrawn from the institution listed on this researcher’s published work.
Research themes (UN SDGs)
05 · Selected work
Recent publications
16 works22 Apr 2026
Structural and electric-field control of exciton in coupled double InGaN/GaN quantum dotsPublisher siteChinese Journal of Physics, GaN-based semiconductor devices and materials
28 Mar 2026
Nonlinear optical sensitivity of quantum wells to external pressure and temperature fieldsPublisher siteOptik, Nonlinear Optical Materials Studies
30 Jan 2026
Diamagnetic susceptibility of pyramidal core/shell/shell quantum dots under Konwent-like confinement and electric fieldPublisher siteSolid State Communications, Quantum and electron transport phenomena
1 Jan 20262cites
Machine learning for optimized nonlinear optical rectification in core/shell nanodiscs under hydrostatic pressurePublisher siteCeramics International, Semiconductor Quantum Structures and Devices
18 Oct 2025
Hydrostatic pressure-induced variations in the donor impurity binding energy and photoionization in a pillbox quantum dotPublisher siteMicro and Nanostructures, Semiconductor Quantum Structures and Devices
15 Oct 2025
Impact of radius variation and external bias on the optical properties of GaAs/Al <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si3.svg" display="inline" id="d1e277"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> </mml:math> Ga <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si4.svg" display="inline" id="d1e285"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> </mml:math> As quantum well wiresPublisher siteMaterials Science and Engineering B, Semiconductor Quantum Structures and Devices
25 Sept 2025
Artificial neural network-based forecasting of strained InGaN/GaN quantum well-related optical absorptionPublisher siteSolid State Communications, GaN-based semiconductor devices and materials
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