Zinc Telluride Prepared by RF-Sputtering at 150W: Optical, Structural and Electrical Properties

Abstract

Zinc telluride (ZnTe) thin films was successfully deposited by cathodic radio frequency sputtering process onto glass substrate. The optical, structural and electrical properties were determined at 150W RF-power. The values of the optical band gap, grain size and thickness were measured. The results of the X-ray diffraction analysis exhibited regular patterns of the cubic ZnTe structure. The grown sample is found to be polycrystalline in (111) preferred orientation. The film taken out from Cobalt doped ZnTe reveals the electrical resistivity around 4.6 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> Ωcm with an energy band gap of about 1.76 eV along with a film thickness of approximately 2365 nm and showed also a highest crystallographic quality.