article · Materials Advances

Thermal evaporation fabrication of UV-NIR p–i–n photodetectors based on highly tensile-strained Ge <i>via</i> incorporation of Pb rather than Sn and As

Mohamed Nawwar
Abdelhamid El‐Shaer
Ahmed Mourtada Elseman
Magdy Abo Ghazala
M. Saeed
Abd El‐Hady B. Kashyout

2025Open accessKafr el-Sheikh University

Abstract

Direct band gap strained germanium (Ge) is one of the promising materials that have been used in various applications in the last decades, with elements such as Sn, As, and Pb being used to modulate the Ge band gap.

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DOI: 10.1039/d5ma00940e

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