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article · International Journal of Computational Materials Science and Engineering

Study of the dependence of the ZT figure of merit on doping and temperature of ZnO

Abstract

In this study, we have calculated thermoelectric properties as a function of temperature and doping of the most stable phases of ZnO using first-principle calculations combined with semi-classical equation of Boltzmann. The nature of electrical conductivity is determined; the coefficient of Seebeck and figure of merit as a function of a charge carrier concentration of three structures studied are calculated. At high doping concentration, the rocksalt phase shows the best figure of merit.

Research topics

  • Advanced Thermoelectric Materials and Devices
  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films

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DOI: 10.1142/s2047684123500136

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