Ramp Type Heating in a Semiconductor Medium under Initial Stress and Photothermal Theory

Abstract

This study investigates deformations within a homogeneous semiconductor thermoelastic medium subjected to initial stress and ramp type heating employing the theoretical photothermal model. Utilizing the normal mode method, precise expressions for key distributions, such as temperature, carrier density, stresses and displacement components, are derived. Numerical computations are facilitated through Mathematica programming, focusing on a material exhibiting properties analogous to a silicon. Integrating Photothermal model, initial stress, wave number and time, the research visually portrays the impact of these factors on the considered state variables through graphical representations. The numerical and graphical results underscore the significant influence of wave number, time, and initial stress on the various field quantities. This investigation provides valuable insights into the synergistic dynamics among an initial stress constituent, semiconductor structures, and wave propagation, enabling advancements in nuclear reactors’ construction, operation, electrical circuits, and solar cells.