Photon‐spin coherent manipulation of piezotronic nanodevice

Abstract

The purpose of the present work is to investigate the spin dynamics of nanoscale junction formed of diluted ferromagnetic semiconductor as two leads and a curved semiconducting nanowire (NW). This NW is zinc oxide (ZnO) nanostructure, since it exhibits piezoelectric property. The spin transport characteristics of such junction is investigated by deducing the spin current for both parallel and antiparallel spin alignments using the effective mass method and Floquet theory. The effect of strain, generated due to bending the NW, on the spin current is investigated. Rashba spin‐orbit interaction, the influence of the photon energy of the induced ac‐field and magnetic field are considered. Numerical calculations show that the spin current, for both parallel and antiparallel spin alignments, varies with the induced strain strongly. This variation might be due to piezoelectric effect. Also, the strain gauge factor is calculated. Results for large gauges factor may find applications in different fields of nanotechnology. Results show that the spin transport characteristics are highly sensitive to strain mainly due to the shift in Fermi energy due to piezoelectric effect. Also, results show that the variation of Young's modulus of ZnO NW with strain and it might be monitored by giant magnetoresistance.