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Numerical Simulation of Absorber and Buffer Layers Properties Effect on CZTS Based Solar Cell Using SCAPS-1D

Abstract

SCAPS-1D was used in this paper to investigate the impact of thickness and gap energy of the CZTS absorber and buffer layer Zn (O, S) on the performance of the solar cell. We begin with introducing the experimental thickness and band gap of 608nm and 1.50 eV respectively, and we have found: an open circuit voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{V}_{\mathbf{oc}}=\mathbf{1.16}\ \mathbf{V}$</tex> and the conversion efficiency of solar light to electricity was more than 15%. At the second point, we have varied the thickness and gap and we observed that the simulated cell had best thickness and gap energy of 2500 nm and 1.47 eV. These new values have led to our optimum device revealed these results an efficiency above 21%.

Research topics

  • Chalcogenide Semiconductor Thin Films
  • Advanced Semiconductor Detectors and Materials
  • Silicon and Solar Cell Technologies

Sustainable Development Goals

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DOI: 10.1109/icaige62696.2024.10776745

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