Magnetic Field Effect in Hydrogen‐Bonded Semiconductor‐Based Organic Field‐Effect Transistors

Abstract

Herein, the magnetic field effect on the source–drain current of organic field‐effect transistors with semiconductor layers made of H‐bonded pigments is studied. In all devices, an external magnetic field reduces the source–drain current in the transistor. The magnetic field effect is independent of the direction of the applied magnetic field. The observed increase of the magnetoresistance seems to originate from the used semiconductor or the semiconductor–dielectric interface and is not influenced by the nature of the gate electrodes or the semiconductors’ deposition procedure (e.g., grain size, layer thicknesses, etc.). As all prepared devices do have single charge carrier nature, the formation of bipolarons is suggested to be responsible for the observed magnetic field effect. The presented experiments demonstrate that hydrogen‐bonded semiconductors behave no different than their classical van der Waals‐bonded fully conjugated semiconductors’ counterparts.