Influence of Zinc Ion Concentration on the Structural, Surface Morphology and Optical Properties of Zinc Selenide Thin Films

Abstract

ZnSe thin films were deposited on nonconducting glass substrates using different Zn[Formula: see text] ion concentrations. The films were deposited at 80°C for 2.0[Formula: see text]h via photo-assisted chemical bath technique and annealed for 2.0[Formula: see text]h at 250°C. X-ray diffraction revealed a hexagonal structure with preferred orientation along the (002) plane and the average crystallite size decreased from 10.5[Formula: see text]nm to 6.8[Formula: see text]nm with increased Zn[Formula: see text] ions. Raman spectra were used to confirm ZnSe phonon modes whose intensity increased with Zn[Formula: see text] ion concentrations although with fluctuation. Optical analysis showed higher absorbance and low transmittance in the visible region than near infrared making the thin films good materials for selective absorber surfaces. The band gap increased from 2.52[Formula: see text]eV to 2.78[Formula: see text]eV as the Zn[Formula: see text] ion concentration varied from 0.05% to 0.25%. The presence of the desired elements was confirmed by the EDS. Photoluminescence studies revealed three emission peaks which were all ascribed to defect state levels in ZnSe and all the samples emitted in reddish color according to CIE color chromaticity analysis. The selective absorption, wide band gap and broad emission properties suggest that the material is promising for optoelectronic applications.