article · Crystals
Cadmium sulphide thin films can be produced on glass substrates using a low-cost, low-temperature chemical bath deposition technique. Examining the impact of deposition time across intervals between 5 and 60 minutes demonstrates clear changes in structural, morphological, and optical characteristics. The films form mixed cubic and hexagonal crystalline structures with average crystal sizes spanning 21 to 50 nanometres, assembling into hierarchical nanoflake networks that resemble entangled plant roots. Raman spectroscopy verifies characteristic vibration modes for cadmium sulphide at 298 and 599 reciprocal centimetres. Increasing the deposition time systematically narrows the optical band gap from 2.4 down to 2.22 electron volts. Additionally, photoluminescence measurements reveal that longer deposition reduces emission intensity, which signifies lower recombination of charge carriers and suggests strong suitability for optoelectronic uses.
Understanding how simple processing parameters alter thin-film semiconductors helps streamline the fabrication of functional materials. By varying deposition time in an accessible, low-temperature chemical process, properties such as crystal dimensions and light absorption can be adjusted. This provides useful guidance for tailoring components in optical and electronic devices without relying on high-temperature or expensive manufacturing equipment.
The findings suggest cadmium sulphide thin films could be utilised in optoelectronic applications. Potential end users include developers and manufacturers working on optoelectronic devices requiring tunable semiconductor materials. Because the work evaluates fundamental structural and optical properties of laboratory-grown samples on glass, the technology is at an early stage of research and requires device-level integration and testing before practical use.
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CdS thin films were deposited on glass substrates employing low-cost and low-temperature chemical bath deposition (CBD). The effect of deposition time on the fabricated sample’s properties was investigated by XRD, SEM, EDX, Raman, UV-vis spectrophotometry, and PL spectroscopy. XRD results indicate the formation of cubic and hexagonal structures of CdS thin films. The calculated average crystal size ranged from 21–50 nm. SEM results indicate the formation of hierarchical nanoflakes where the nanoflakes are entangled with one another like plant roots. Raman study confirmed that the fabricated thin films have two distinct peaks that are centered at 298 cm−1 and 599 cm−1, which are characteristic vibration modes for CdS thin film. UV-vis absorption spectra indicate absorption band edges near 500 nm, which are related to the band gap values of CdS thin films. The estimated Eg of CdS thin films was reduced from 2.4 to 2.22 eV as the deposition time increased from 5 to 60 min. PL results show the main peak centered at 537 nm, its intensity decreasing as deposition time increases, indicating lower recombination of charge carriers. Our results reveal that CdS thin films are an excellent candidate for optoelectronic applications.
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DOI: 10.3390/cryst13050788
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