article · Scientific Reports
Numerical modelling was used to assess the performance of a cadmium telluride and silicon dual-junction solar cell by examining defect density at different energy levels within the absorber layer. The analysis evaluated defect concentrations across varying thicknesses of the cadmium telluride layer, as well as shifts in the bandgaps of the top and bottom cells. The findings show that a defect density between 10 to the power of 14 and 10 to the power of 15 per cubic centimetre is acceptable for the top cell. While open circuit voltage, short circuit current density, and overall efficiency are more sensitive to defect concentrations when the cadmium telluride layer is thicker, the fill factor is primarily influenced by defect density irrespective of layer thickness. Optimal performance was achieved with a top layer thickness of 300 nanometres, top bandgaps between 1.45 and 1.7 electronvolts, and a silicon bandgap near 1.1 electronvolts.
Tandem solar cells combine different materials to capture more sunlight and boost power generation. Understanding how microscopic material flaws affect energy output helps scientists design more efficient devices. This research clarifies the specific defect limits and layer thicknesses needed to prevent performance losses in dual-junction devices combining cadmium telluride and silicon.
This research provides design parameters that could inform photovoltaic manufacturers and engineers developing tandem cadmium telluride and silicon solar cells. By defining permissible defect thresholds and optimal layer dimensions, the findings guide materials processing targets. Because the work is based entirely on numerical simulation using wxAMPS software, it represents early-stage research that requires physical fabrication and experimental testing before commercial deployment.
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Abstract A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 10 14 and 10 15 cm −3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (ƞ) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film’s thickness. An acceptable defect density of up to 10 15 cm −3 at a CdTe thickness of 300 nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7 eV in tandem with a Si bandgap of about 1.1 eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer.
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DOI: 10.1038/s41598-024-55616-2
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