Enhancement of Magnetization of the Diluted Magnetic Semiconductor (Ga, Mn)As by Hole Doping

Abstract

In this paper, the effects of hole doping on the magnon specific heat, average number of magnons, magnetization, and Curie temperature (Tc) of the diluted magnetic semiconductor (DMS) (Ga, Mn)As are theoretically studied using Green function formalism and employing a model system Hamiltonian consisting of magnons, holes, and interactions between magnons and holes. The specific heat capacity of magnons and the number of magnons are found to decrease in the presence of holes and hole–magnon interaction strength, whereas magnetization and Curie temperature (Tc) increase. Our study also reveals that at a constant finite temperature, an increased number of holes lead to a significant increase in magnetization. However, at T = 0, the ground state magnetization value does not exhibit any change with increased free holes and hole–magnon interaction strength. The increased magnetization resulting from doping with holes or electron excitations in this study may present an opportunity to utilize the system under consideration for spintronics purposes at room temperature.