Enhanced Growth Rate of ITO Thin Films via Pulsed Electron Beam-Assisted Deposition Using a 3.0 kJ Dense Plasma Focus (UMDPF02) Device

Abstract

Abstract Indium tin oxide (ITO) thin films are crucial for smart windows and electromagnetic interference (EMI) shielding applications due to their excellent electrical conductivity, optical transparency, and ability to reflect infrared radiation while blocking electromagnetic interference. This study investigates ITO film deposition using a pulsed electron beam-assisted dense plasma focus (PF) device, emphasizing growth rate, conductivity, and film quality. The 3.0 kJ UMDPF02 system, operated at 2.16 kJ, deposited films on glass substrates with 5, 10, 15, and 20 shots. EDX confirmed the progressive incorporation of In, Sn, and O without impurities, aligning with ITO stoichiometry (In2O3/SnO2: 90/10 wt%), while decreasing Si content indicated improved film coverage. SEM revealed enhanced surface uniformity with increasing shots. A near-linear growth rate of ~1.428 µm/shot and a time-averaged deposition rate of ~0.286 μm/min were achieved, significantly exceeding conventional plasma methods. XRD confirmed a cubic bixbyite phase with increasing crystallinity, a strong (222) orientation, and a decreasing I400/I222 ratio (0.49 to 0.32), indicating reduced oxygen vacancies. UV-vis spectroscopy showed bandgap narrowing from 4.00 eV (5 shots) to 3.79 eV (20 shots), attributed to increased thickness, enhanced crystallinity, and reduced defect states. The 20-shot sample exhibited the highest conductivity (9.76 × 105 (Ω.m)-1) due to increased shot counts, greater thickness, and Sn incorporation into the In2O3 lattice. These findings establish PF-assisted deposition as a high-rate, energy-efficient method for producing high-quality ITO films, positioning it as a promising alternative for smart windows and EMI shielding applications.