Electronic states in GaAs/AlGaAs/GaAs core/shell cylindrical quantum wires

Abstract

Abstract Cylindrical quantum wires (CQWRs) based on GaAs/ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>Al</mml:mi> </mml:mrow> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">x</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">B</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mi>Ga</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>1</mml:mn> <mml:mo>−</mml:mo> <mml:msub> <mml:mrow> <mml:mi mathvariant="normal">x</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">B</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> </mml:msub> <mml:mi>As</mml:mi> </mml:math> /GaAs core/shell semiconductors are multilayer semiconductor nanostructures that exhibit interesting electronic properties. In this study, we explore in detail the electronic band structure and electronic transmission spectrum in these core/shell CQWRs in relation to various parameters such as inner and outer shell radius and aluminum-doping rate. Using Green’s function formalism, an advanced theoretical approach to solving Schrödinger’s equation in the effective mass approximation, taking into account the confinement potential of the cylindrical geometry. The results show that as the difference between the outer and inner radii of the shell increases, the number of electronic states increases due to the weakening of geometric confinement. In addition, as the concentration of Aluminum in the shell increases, the electronic states move to higher energies, due to the increase in confinement by the height of the potential. This study aims to provide an overview of the electronic states in core/shell nanowires, due to modification in Al molar concentration and shell size; they offer advantages such as better electronic transmission. We can control the electronic band structure of this nanowire, which can be used to fabricate high-performance electronic devices such as transistors, diodes and sensors.