article
The objective of this paper is to present the design of a high-power amplifier using the Wilkinson power divider/combiner methodology. The single-stage power amplifier is based on a GaN HEMT transistor and operates in class AB. By employing the Wilkinson-based power combining approach, the output power was successfully increased from 45 dBm (for the single-stage amplifier) to 48.827 dBm at 3 GHz. In addition to the enhanced output power, the achieved gain of 15 dB and efficiency of 65% demonstrate high performance compared to previous works. Designed using microstrip technology, the resulting power amplifier is well-suited for S-band applications such as wireless and satellite communications, as well as Radar systems.
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DOI: 10.1109/med64031.2025.11073528
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