Design and Implementation of a Broadband, Low Voltage, and Low Power GaAs Power Amplifier

Abstract

Abstract—This article describes the step-by-step design and implementation of a GaAs power amplifier (PA) that operates at low voltage and low power, while providing broadband coverage. The design methodology used to ensure high performance within the desired frequency range is explained in detail, and the matching network and bias circuit are implemented using microstrip technology. A PA prototype is then fabricated to demonstrate the performance of the proposed design, using the Agilent Technologies (hp)® ATF13786 field effect transistor. The evaluation of the PA’s performance involves the application of both small-signal and large-signal measurements. Notably, large-signal assessments reveal a power gain of 10 dB, a saturated output power of 15.8 dBm, power-added efficiency (PAE) of 21.8%, and drain efficiency (DE) of 26.3% at a frequency of 3.5 GHz. This design, characterized by its simplicity, compactness, and versatility, exhibits applicability across a diverse array of contexts.