Advancing Solar Cell Efficiency: Experimental and Numerical Analysis of Mn-Doped ZnS as a Buffer Layer

Abstract

The present study dives into the effects of different manganese (Mn) doping concentrations on zinc sulfide (ZnS) thin films, adopting an inexpensive and effective deposition process. Undoped and Mn-doped ZnS thin films were prepared using ultrasonic-assisted chemical vapor deposition (Mist CVD) on a soda-lime glass substrate in a reactor chamber maintained at a high temperature of 450 °C. This paper aims to explore how the doping rate of Mn affects the structural, morphological, optical, and electrical characteristics of ZnS/Mn thin films using XRD, Raman spectroscopy, SEM, UV-vis spectrophotometry, and Hall Effect measurements. SCAPS-1D simulations were employed to assess their photovoltaic potential. Results show that Mn doping significantly alters the films' properties, with the ZnS/Mn (12%) buffer layer yielding a simulated solar cell efficiency of 14.91%, which increased to 20.40% after optimization. These findings demonstrate the promising role of Mn-doped ZnSparticularly at moderate doping levelsas an environmentally friendly alternative to CdS in thin-film solar cell applications.