Advances in 2.4 GHz GaN, GaAs and InGaAs power amplifiers: technologies, challenges, and trends

Abstract

Abstract This study offers a comprehensive and diligent analysis of the current developments of power amplifier (PA) for the 2.4 GHz band, spectrum of growing importance due to its wide range of applications such as wireless communications, medical, IoT, and radar. The analysis spans the last decade of research, offering a balanced evaluation of Gallium Nitride (GaN), Gallium Arsenide (GaAs) and Indium Gallium Arsenide (InGaAs) power amplifiers. It evaluates the root factors driving power amplifier performance metrics, such as output power, efficiency, and linearity, based on both quantitative and qualitative comparisons of comprehensive sets of extracted performance metrics from recent research articles. The research evaluates the effect of various available substrate materials, from economical FR4 (Flame Retardant) through high-end laminates like Rogers (e.g., RO4350, RT5880) and Taconic, to the final characteristics of the amplifiers. Further, the work covers the application of a wide range of methodologies of enhancing the performance of the resultant devices, including Doherty, Digital Pre-Distortion (DPD), and Load Modulation, and compares the effectiveness of the current top-notch transistor families: GaN, GaAs, and InGaAs. This work highlights the trade-offs that guide technology selection. Ultimately, it serves as a reference for the design and development of next-generation, high-performance power amplifiers optimized for the 2.4 GHz band.