article · Scientific Reports
A new mathematical framework examines how semiconductor elastic materials behave under an external magnetic field. The model fully couples the interactions among plasma, thermal, and elastic waves to capture plasma thermoelastic phenomena. This formulation is evaluated by solving Danilovskaya's problem for an isotropic homogeneous semiconductor medium. By applying Laplace transforms to derive solutions in the frequency domain, direct numerical methods are then used to calculate the inverse Laplace transform to map results back to the physical domain. The resulting numerical outputs detail key physical variables, including temperature, mechanical stress, physical displacement, chemical potential, carrier density, and current carrier distributions. These distributions are tracked across varying durations and depths within the material, and the framework is compared directly against several earlier fundamental models.
Understanding how semiconductor materials respond to combined magnetic, thermal, and mechanical stresses is vital for accurately describing modern solid-state phenomena. By accounting for the simultaneous interaction of wave propagation and carrier density, this theoretical framework offers a detailed look at how internal physical fields evolve over time and depth under external influences.
The abstract focuses purely on theoretical and numerical modelling, so it does not indicate a specific commercialisation pathway or target market. As early-stage mathematical research, the framework could potentially serve computational researchers or simulation software developers studying material physics, but it remains far from practical, applied use.
AI-generated from the published abstract. Always read the original work before citing.
This study presents a new mathematical framework for analyzing the behavior of semiconductor elastic materials subjected to an external magnetic field. The framework encompasses the interaction between plasma, thermal, and elastic waves. A novel, fully coupled mathematical model that describes the plasma thermoelastic behavior of semiconductor materials is derived. Our new model is applied to obtain the solution to Danilovskaya's problem, which is formed from an isotropic homogeneous semiconductor material. The Laplace transform is utilized to get the solution in the frequency domain using a direct approach. Numerical methods are employed to calculate the inverse Laplace transform, enabling the determination of the solution in the physical domain. Graphical representations are utilized to depict the numerical outcomes of many physical fields, including temperature, stress, displacement, chemical potential, carrier density, and current carrier distributions. These representations are generated for different values of time and depth of the semiconductor material. Ultimately, we receive a comparison between our model and several earlier fundamental models, which is then graphically represented.
This page summarises published work. The authoritative version sits with the publisher.
DOI: 10.1038/s41598-024-63554-2
Is something wrong with this record? Report it or request removal.
Discussion
Have you built on this work, tried to replicate it, or seen it applied in practice? Share what you know. Verified researchers and MARATTO™ domain experts can open a discussion, and any member can reply. Contributions are reviewed before they appear.
No discussion yet. Open the first thread.
New to MARATTO™? Create a free account.
