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article · Springer Link (Chiba Institute of Technology)

A 3.5 GHz High Efficiency Doherty GaN Power Amplifier for 5G Applications

Abstract

In this paper, 3.5 GHz power amplifier (PA) for 5G-NR n78 band base stations has been designed and co-simulated. The PA is realized with the Doherty method using Wolfspeed CGHV35120F GaN HEMT on an FR4 substrate. Electromagnetic-circuit co-simulation illustrates meeting 3GPP linearity requirements with 50 dBm output power, 12 dB large-signal gain at saturation, and above 65% power-added efficiency (PAE).

Research topics

  • Advanced Power Amplifier Design
  • GaN-based semiconductor devices and materials
  • Microwave Engineering and Waveguides

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DOI: 10.1051/epjconf/202638001015/pdf

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